Toshiba 2SJ200 Field Effect Transistor Datasheet


Toshiba 2SJ200 Field Effect Transistor Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
175 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
C577FF649B7373BB4F0769DC87BB8CDD

About this manual

This document is a technical datasheet for the Toshiba 2SJ200, a high-power amplifier application field-effect transistor. It specifies that the device is a silicon P-channel MOS type with a drain-source voltage rating of -180V and a maximum drain current of -10A.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Switching Time
  • Safe Operating Area
  • Waveforms

Frequently asked questions

What is the maximum continuous drain current rating?

The transistor has a maximum continuous drain current of -10 A.

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