This document is a technical datasheet for the Toshiba 2SJ106, a silicon P-channel junction type field-effect transistor. It lists suggested applications including audio frequency amplifiers, analog switches, constant current sources, and impedance converters.
The datasheet provides maximum ratings such as a gate-drain voltage of 50V and a drain power dissipation of 150mW at 25°C. It also includes detailed electrical characteristics like input capacitance (Ciss) and reverse transfer capacitance (Crss), along with output characteristic curves showing the relationship between drain current, source-gate voltage, and ambient temperature.
| Junction Temperature (T_J) | 125 °C |
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The maximum rated junction temperature is 125 °C.
At an ambient temperature of 25°C, the drain power dissipation is 150 mW.