This document is a technical datasheet for the Toshiba 2SJ105, a silicon P-channel junction type field effect transistor. It specifies that the device is designed for use in audio amplifiers, analog switches, constant current sources, and impedance converters.
The datasheet provides maximum ratings such as a gate-drain voltage of 50V and a drain power dissipation of 200mW. Key electrical characteristics include a typical on-resistance (RDS(ON)) of 270 ohms at -5mA, a gate cut-off current of 1.0nA maximum, and compatibility with the complementary part number 2SK330.
| Junction Temperature (Tj) | 125 °C |
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