This document is a technical datasheet for the Toshiba 2SJ201, a silicon P-channel field effect transistor designed for high power amplifier applications. It specifies that the device has a drain-source breakdown voltage of -200V and a continuous drain current rating of -12A.
The maximum drain power dissipation is 150 W when the case temperature is 25°C.
This transistor must be handled with caution because it is an electrostatic sensitive device.