2SJ305 is a transistor produced by Toshiba Company
This document is a technical datasheet for the Toshiba 2SJ305, a silicon P-channel field-effect transistor designed for high-speed switching and analog applications. Key features include low gate threshold voltage, excellent switching times, and low drain-source on-resistance.
The datasheet provides maximum ratings such as a drain-source voltage of -30V and a DC drain current of -200mA. It also includes detailed electrical characteristics like input capacitance, output capacitance, turn-on time (typical 0.06µs), and turn-off time (typical 0.15µs).
| Drain-Source Voltage (VDS) | -30 V |
|---|---|
| Gate-Source Voltage (VGSS) | -20 V |
| DC Drain Current (ID) | -200 mA |
| Drain Power Dissipation (Pd) | 200 mW |
| Channel Temperature (Tch) | 150 °C |
| Turn-on Time (ton) | 0.06 µs (Typ.) |
| Turn-off Time (toff) | 0.15 µs (Typ.) |
| Drain-Source ON Resistance (RDS(ON)) | 2.4 Ω (Typ.) |
The typical turn-on time is 0.06 µs.
The maximum channel temperature is rated at 150 °C according to JEDEC standards.