The document provides information about the supplier of 2SJ315.
This document is a technical datasheet for the Toshiba 2SJ315, a silicon P-channel MOS type field effect transistor designed for DC-DC converter industrial applications. The device features an enhancement-mode structure with a low drain-source ON resistance of 0.250 ohms (typical) and operates within a maximum channel temperature of 150 °C.
| Drain-Source Voltage (Vdss) | -60 V |
|---|---|
| Drain Power Dissipation (Pd) | 20 W |
| Channel Temperature (Tjoh) | 150 °C |
| Drain-Source ON Resistance (RDS(ON)) | 0.250 ohms (Typ.) |
| Gate Threshold Voltage (Vth) | -0.8 ~ -2.0 V |
The maximum continuous drain reverse current is 7 A.
The drain power dissipation is 20 W when the case temperature is 25°C.
The maximum channel temperature is 150 °C.