This document is a technical datasheet for the Toshiba 2SJ241, a silicon P-channel MOS field effect transistor. It is designed for high-speed, high-current DC-DC converter, relay drive, and motor drive applications.
The datasheet provides absolute maximum ratings, electrical characteristics at 25°C, and source-drain diode ratings. It includes detailed graphs illustrating transfer characteristics, output characteristics, safe operating areas, and thermal performance.
| Drain-Source Voltage (Vdss) | -60 V |
|---|---|
| Gate Threshold Voltage (Vth) | -2.0 V to -4.5 V |
| Drain-Source ON Resistance (Rds(on)) | 38 to 90 Ohms |
| Continuous Drain Current (Id) | 20 A |
| Drain Power Dissipation (Pd) | 100 W |
| Thermal Resistance, Channel to Ambient (Rth-ja) | 83.3 °C/W |
| Package Weight | 15g |
It is intended for use in high speed, high current DC-DC converters, relay drives, and motor drive applications.
The absolute maximum drain-source voltage rating is 60 V.