This document is a technical datasheet for the Toshiba 2SJ104, a silicon P-channel junction type field-effect transistor. It provides specifications suitable for applications such as audio amplifiers, analog switches, constant current sources, and impedance converters.
The datasheet lists maximum ratings including gate-drain voltage of 25V and drain power dissipation of 400mW. Electrical characteristics cover parameters like gate cut-off current, breakdown voltages, forward transfer admittance, and input capacitance under specific test conditions.
| Drain Power Dissipation (P_D) | 400 mW |
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The typical drain-source on resistance (RDS(ON)) is 400 ohms.