This datasheet lists the data of 2SJ343, including current, voltage, power and other information
This document is a technical datasheet for the TOSHIBA 2SJ343, a silicon P-channel field-effect transistor designed for high-speed switching applications. The device features an enhancement-mode structure with a low threshold voltage range of -0.8V to -2.5V and is packaged in a JEDEC TO-236MOD or EIAS SC-59 package.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain-source voltage of -50V and a drain power dissipation of 200mW at 25°C. It also includes equivalent circuit diagrams, switching time test circuits, and various performance graphs illustrating relationships between drain current, voltage, capacitance, and temperature.
| Drain-Source Voltage (VDS) | -50 V |
|---|---|
| Gate-Source Voltage (VGSS) | -7 V |
| DC Drain Current (ID) | -50 mA |
| Drain Power Dissipation (PD) | 200 mW |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature Range (Tstg) | -55~150 °C |
The gate threshold voltage ranges from -0.8V to -2.5V.
Yes, it is complementary to the 2SJ1826.