Toshiba 2SJ103 Field Effect Transistor Datasheet


Toshiba 2SJ103 Field Effect Transistor Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
176 KB
Published
07 June, 2012
Updated
27 July, 2012
MD5 checksum
0F8BCB9F24FC57EF70A10B89BACDC20E

About this manual

This document is a technical datasheet for the Toshiba 2SJ103, a silicon P-channel junction type field-effect transistor. It specifies applications including audio amplifiers, analog switches, constant current sources, and impedance converters.

The datasheet provides comprehensive electrical characteristics such as maximum ratings, gate cut-off current, drain-source on resistance, and input capacitance under standard test conditions of 25°C.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Drain Current vs. Drain-Source Voltage
  • On Resistance vs. Gate-Source Voltage
  • Forward Transfer Admittance

Specifications

Gate Current (I_gg)-10 mA
Junction Temperature (T_j)125 °C

Frequently asked questions

How much does a single unit of this transistor weigh?

The weight of the component is 0.21g.

Download PDF (176 KB)

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