2SJ342 is an electronic component
This document is a technical datasheet for the TOSHIBA 2SJ342, a silicon P-channel field-effect transistor designed for high-speed switching and analog switch applications. Key features include a low gate threshold voltage ranging from -0.8V to -2.5V and compatibility with the complementary part 2SK1825.
| Drain-Source Voltage (VDS) | -50 V |
|---|---|
| Gate-Source Voltage (VGSS) | -7 V |
| DC Drain Current (ID) | -50 mA |
| Drain Power Dissipation (PD) | 300 mW |
| Channel Temperature (Tch) | 150 °C |
The maximum rated drain-source voltage is -50 V.
The maximum drain power dissipation is 300 mW.