2SJ313 datasheet
This document is a technical datasheet for the TOSHIBA 2SJ313, a silicon P-channel field-effect transistor (MOS type). It provides specifications suitable for audio frequency power amplifier applications.
The datasheet lists maximum ratings such as a drain-source voltage of -180V and a power dissipation of 25W. It also includes electrical characteristics like gate leakage current and breakdown voltage, along with graphical data on safe operating areas and waveforms.
| Drain-Source Voltage | -180 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Drain Current | -1 A |
| Power Dissipation | 25 W |
| Channel Temperature | 150 °C |
The maximum power dissipation is rated at 25 W when the case temperature (Tc) is 25°C.
The minimum Drain-Source Breakdown Voltage is -180 V when the drain current is -10 mA.
The typical Forward Transfer Admittance (Yfs) is 0.78 S.