This document is a technical datasheet for the Toshiba 2SJ108, a silicon P-channel junction type field-effect transistor. It is recommended for use in low noise audio amplifier applications, specifically as first stages in EQ amplifiers and MC head amplifiers.
The datasheet provides comprehensive static characteristics including maximum ratings such as a gate-drain voltage of 25V and a drain power dissipation of 200mW. Key electrical parameters listed include input capacitance, reverse transfer capacitance, noise figure, and forward transfer admittance under specific test conditions.
| Gate-Drain Voltage (Vops) | 25 V |
|---|---|
| Drain Power Dissipation (Pp) | 200 mW |
| Junction Temperature (Tj) | 125 °C |
The maximum gate-drain voltage is rated at 25 V.
The typical noise figure is 0.5 dB under those conditions.
The maximum gate current is -10 mA.