This document is a technical datasheet for the Toshiba 2SJ109, a silicon monolithic P-channel junction type field-effect transistor (JFET). The device is specifically designed for low noise audio amplifier and differential amplifier applications. Key features include very low noise performance with a typical Noise Figure of 0.5dB and very high input impedance.
| Gate-Drain Voltage | 30 V |
|---|---|
| Drain Power Dissipation | 200 mW |
| Junction Temperature | 125 °C |
| Noise Figure (Typical) | 0.5 dB |
| Input Capacitance | 95 pF |
The maximum gate-drain voltage rating is 30 V.
The typical noise figure is 0.5 dB when tested with a signal source resistance of 1 kΩ at 1 kHz.