The document describes the features and applications of the TPCS8104 model field effect transistor, including its use in notebook PCs and portable equipment. The transistor has small size, low drain-source resistance, high forward transfer admittance, and low leakage current.
This document is a technical datasheet for the TOSHIBA TPCS8104, an N-channel (P-Channel) Field Effect Transistor. The device features a small footprint package with low drain-source ON resistance of 8.1 mΩ typical and high forward transfer admittance.
| Drain-source breakdown voltage | -30 V |
|---|---|
| Gate threshold voltage | -0.8 to -2.0 V |
| Drain-source ON resistance | 8.1 mQ (typ.) |
| Forward transfer admittance | 23 S (typ.) |
| Leakage current | -10 pA (max) |
The document states this transistor is intended for lithium ion battery, notebook PC, and portable equipment applications.
The enhancement-mode gate threshold voltage ranges from -0.8 to -2.0 V.