TPCS8201 is a N-channel MOS transistor manufactured by Toshiba, which has the characteristics of miniaturization, low resistance, high gain, and can be used in lithium battery, portable equipment and other application scenarios
The document describes the TOSHIBA TPCS8201, a Field Effect Transistor Silicon N Channel MOS Type (U-MOS II). It is specifically optimized for Lithium Ion Battery Applications and Portable Equipment Applications such as Notebook PCs. Key features include a small footprint due to its thin package, low drain-source ON resistance of 22 mΩ typical, high forward transfer admittance of 13 S typical, and very low leakage current.
| Drain-source voltage (Vdss) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (Rds(on)) | 22 mQ (typ.) |
| Forward transfer admittance (|Yfs|) | 13 S (typ.) |
| Leakage current (Ipgg) | 10 pA (max) |
| Channel temperature | 150 °C |
The TPCS8201 is intended for use in lithium ion battery applications, portable equipment, and notebook PCs.
A typical unit of the TPCS8201 weighs 0.035 g.