This document describes the TPCS8204 TOSHIBA field effect transistor, which is suitable for lithium ion battery applications, notebook PC applications, and portable equipment applications. It features a small footprint and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.
This document is a technical datasheet for the TOSHIBA TPCS8204, an N-channel silicon MOS type field-effect transistor (U-MOSIII). The device features a small footprint package with low drain-source ON resistance of 18 mΩ typical and high forward transfer admittance. It is specifically noted for applications in lithium-ion batteries, notebook PCs, and portable equipment.
| Drain-source ON resistance (typical) | 18 mΩ |
|---|---|
| Forward transfer admittance (typical) | 15 S |
| Leakage current (max) | 10 pA |
| Gate threshold voltage range | 0.5~1.2 V |
| Channel temperature (max) | 150 °C |
The device is designed for lithium ion battery, notebook PC, and portable equipment applications.