This document is a technical datasheet for the Toshiba TPCS8203, an N-channel silicon MOS transistor (U-MOSTI) optimized for low-drain-source on-resistance. It is specifically designed for use in lithium-ion battery applications such as notebook PCs and portable machines.
The datasheet provides maximum ratings, electrical characteristics, thermal properties, and circuit configuration details. Key specifications include a drain-source voltage of 20V, a continuous drain current of 6A, and a typical on-resistance of 17 mΩ.
| Drain-Source Voltage (VDS) | 20 V |
|---|---|
| Continuous Drain Current (IDC) | 6 A |
| Drain-Source ON Resistance (Typical) | 17 mΩ |
| Gate Threshold Voltage Range | 0.5~12V |
| Channel Temperature (Max) | 150 °C |
It is designed for lithium-ion battery applications such as notebook PCs and portable machines.
Yes, the document states that this transistor is an electrostatic sensitive device and should be handled with caution.