This document provides parameter information for TPCF8102, including rated voltage, maximum current, etc.
This document is a technical datasheet for the Toshiba TPCF8102, an N-channel Silicon P Channel MOS Type (U-MOS III) field effect transistor. It is specifically designed for notebook PC and portable equipment applications due to its low drain-source ON resistance and high forward transfer admittance.
The datasheet provides comprehensive electrical characteristics including maximum ratings, threshold voltage, capacitance values, and switching times under various test conditions. It also includes graphical data on safe operating areas, thermal characteristics, and dynamic input/output curves.
| Drain-source ON resistance (typical) | 24 mΩ |
|---|---|
| Forward transfer admittance (typical) | 14 S |
| Leakage current (max) | -10 pA |
| Gate threshold voltage range | -0.5 to -1.2V |
| Drain-source breakdown voltage (max) | -20 V |
| Gate threshold voltage (typical) | -1.2 V |
The TPCF8102 is intended for notebook PC and portable equipment applications.
No, the product is not warranted for usage in equipment where malfunction may cause loss of human life or bodily injury.