TPCP8402 is a MOSFET device manufactured by Toshiba. It has low leakage current, low ON resistance and high input impedance.
This document is a technical datasheet for the Toshiba TPCP8402, an enhancement-mode Field Effect Transistor (FET) available in both Silicon P-Channel and N-Channel configurations. It belongs to the U-MOS IV / U-MOS III series designed for portable equipment and motor drive applications.
The document provides detailed electrical characteristics, including typical values for drain-source ON resistance (60 mΩ for P-channel, 38 mΩ for N-channel) and forward transfer admittance. It also lists maximum ratings such as drain-source voltage of ±30V and channel temperature limits up to 150°C.
| Drain-source ON resistance (Typical) P-Channel | 60 mΩ |
|---|---|
| Drain-source ON resistance (Typical) N-Channel | 38 mΩ |
| Forward transfer admittance (Typical) P-Channel | 6.0 S |
| Drain-source voltage rating | -30 to 30 V |
| Channel temperature maximum | 150 °C |
The TPCP8402 is intended for use in portable equipment, motor drive applications, and DC-DC converter applications.
The device must be used while the channel temperature remains below 150°C.