The TPC6501 is a high-performance transistor from Toshiba. Its features are high DC current gain and low saturation voltage. It is suitable for high-frequency switching applications, DC-DC converter applications and strobe applications.
This document is a datasheet for the Toshiba TPC6501, an NPN silicon epitaxial type transistor designed for high-speed switching applications. Key features include a DC current gain (hFE) of 400 to 1000 and a low collector-emitter saturation voltage of 0.12 V maximum.
| Collector-base voltage (VcBo) | 20 V |
|---|---|
| Collector-emitter voltage (VCEO) | 10 V |
| Emitter-base voltage (VEBO) | 7 V |
| DC current gain (hFE) | 400 to 1000 |
| Collector-emitter saturation voltage (VCE(sat)) | 0.12 V max |
| Rise time (tr) | 60 ns typ. |
The maximum collector-emitter voltage is 10 V, and the maximum collector-base voltage is 20 V.
The typical switching time (tf) is 25 ns.