TPC8001 is a N-channel MOSFET produced by Toshiba. It has small package, low leakage current, high switching speed and other characteristics. It is used in lithium ion batteries, portable devices and notebook computers.
This document is a technical datasheet for the Toshiba TPC8001, an enhancement-mode N-channel silicon MOSFET. The device features a small footprint package with low drain-source ON resistance (typical 15 mΩ) and high forward transfer admittance, making it suitable for portable equipment and notebook PC applications.
| Channel type | N Channel MOS Type (1r-MOSVI) |
|---|---|
| Drain-source voltage | 30 V |
| Gate threshold voltage | 0.8 ~ 2.0 V |
| Drain-source ON resistance (typ) | 15 mΩ |
| Forward transfer admittance (typ) | 11 S |
| Leakage current (max) | 10 pA |
| Weight | 0.080 g |
The TPC8001 is intended for use in lithium ion battery and portable equipment applications.
It can handle a maximum drain power dissipation of 24 W for a 10-second pulse.
The device must be used when the channel temperature stays below 150°C.