TPC8003 is a N-channel MOSFET produced by Toshiba. It has a small footprint and low on-resistance, making it suitable for applications such as lithium-ion batteries, portable devices, and notebook PCs.
This document is a technical datasheet for the Toshiba TPC8003, an N-channel Silicon MOS Type Field Effect Transistor (U-MOSII). The device is specifically optimized for low drain-source ON resistance (5.4mΩ typical) and high forward transfer admittance, making it suitable for lithium-ion battery applications, portable equipment, and notebook PCs.
| Drain-source voltage (Vdss) | 30 V |
|---|---|
| Gate threshold voltage (Vth) | 0.8 ~ 2.5 V |
| Drain-source ON resistance (RDS(ON)) | 5.4 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 21 S (typ.) |
| Channel temperature (Tch) | 150 °C |
The TPC8003 is designed for lithium ion battery, portable equipment, and notebook PC applications.
The maximum drain-source voltage rating is 30 V.