TPC6005 is a N-channel MOS type field effect transistor produced by TOSHIBA. It features low on-resistance, high forward transfer admittance and low leakage current. It is suitable for notebook PCs and portable equipment applications.
This document is a technical datasheet for the Toshiba TPC6005, an N-channel silicon MOS transistor designed for notebook PC and portable equipment applications. It highlights key features such as low drain-source ON resistance (21 mΩ typical) and high forward transfer admittance.
The text provides comprehensive electrical characteristics including gate leakage current, breakdown voltages, threshold voltage, and capacitance values at 25°C. It also includes graphical representations of the safe operating area, thermal characteristics, and switching times.
| Drain-source ON resistance (typical) | 21 mΩ |
|---|---|
| Forward transfer admittance (typical) | 105 S |
| Leakage current (max) | 10 pA |
| Gate threshold voltage range | 0.5 to 1.2 V |
| Drain-source breakdown voltage (min) | 30 V |
The typical drain-source ON resistance (RDS(ON)) is 21 mΩ.
The device can be stored at temperatures ranging from -55 to +150 °C.