TPC6103 is a field effect transistor produced by TOSHIBA. It has the characteristics of low leakage current, high switching frequency, and low on-resistance. It can be widely used in notebook computers, portable devices and other fields.
This document is a technical datasheet for the TOSHIBA TPC6103, an enhancement-mode Silicon P-Channel MOS Type (U-MOS II) transistor. It is specifically targeted for use in Notebook PC Applications and Portable Equipment Applications.
The datasheet provides comprehensive electrical characteristics, maximum ratings, and thermal data. Key specifications include a low drain-source ON resistance of 29 mΩ (typical), a high forward transfer admittance of 18 S (typical), and a gate threshold voltage range of -0.5 to -1.2V. The device is rated for a maximum channel temperature of 150°C.
| Forward transfer admittance (typical) | 18 S |
|---|---|
| Gate threshold voltage range | -0.5 to -1.2V |
This transistor is intended for Notebook PC Applications and Portable Equipment Applications.
Yes, it operates in enhancement mode with a threshold voltage between -0.5V and -1.2V.