This document is a technical datasheet for the Toshiba TPC6102, an industrial application silicon P-channel MOS type (U-MOS) transistor. It provides specific performance metrics including low drain-source on-resistance and high forward transfer admittance.
The text details maximum ratings such as a drain-source voltage of -30V and a continuous drain current of 4.5A. It also lists comprehensive electrical characteristics, including gate threshold voltage, input capacitance, switching times, and source-drain diode ratings.
| Drain - Source Voltage | -30 V |
|---|---|
| Continuous Drain Current | 4.5 A |
| Drain Power Dissipation | 2.0 W |
| Channel Temperature | 150 °C |
The device supports a maximum continuous drain current of -4.5 A.
The maximum drain power dissipation is 2.0 W when the ambient temperature is 25°C.
The gate threshold voltage ranges from a minimum of -0.8 V to a maximum of -2.0 V.