TPC6104 is a Field Effect Transistor produced by TOSHIBA. It has the characteristics of low leakage current, high forward transfer admittance, and low on resistance. It is suitable for notebook computers and portable equipment applications.
This document is a technical datasheet for the Toshiba TPC6104, an enhancement-mode silicon P-channel MOS type field-effect transistor (U-MOSIII). It is designed primarily for notebook PC applications and portable equipment.
The datasheet provides comprehensive electrical characteristics including maximum ratings, threshold voltage, on-resistance, and switching times. It also includes graphical data such as safe operating areas, capacitance curves, and thermal resistance specifications.
| Drain-source voltage (Vdss) | -20 V |
|---|---|
| Gate threshold voltage (Vth) | -0.5 to -1.2 V |
| Drain-source ON resistance (Rds(on)) | 33 m& (typ.) |
| Forward transfer admittance (|Yfs|) | 12 S (typ.) |
| Leakage current (Ipgg) | -10 A (max) |
The typical weight of the package is 0.011 g.