This is a TOSHIBA TPC6101 field effect transistor with the main characteristics of low leakage current, high forward transfer admittance and low on resistance.
This document is a technical datasheet for the Toshiba TPC6101, an enhancement-model silicon P-channel MOSFET (U-MOSII). It is specifically targeted for use in notebook PCs and other portable electronic equipment. The device features a low drain-source ON resistance of 48 mΩ typical and a high forward transfer admittance.
| Drain-source ON resistance (typical) | 48 mΩ |
|---|---|
| Forward transfer admittance (typical) | 8.2 S |
| Leakage current (max) | -10 pA |
| Gate threshold voltage range | -0.5 to -1.2 V |
The typical weight of this transistor is 0.011 g.