The TPC6108 is a P-channel MOS type field effect transistor produced by Toshiba. It has small dimensions, low resistance, high transfer gain and low leakage current, and is suitable for use in notebook computers and portable devices.
This document is a technical datasheet for the Toshiba TPC6108, an electrostatic-sensitive Silicon P-Channel MOS Type (U-MOSIV) Field Effect Transistor. It is designed for notebook PC applications and portable equipment, featuring a small footprint due to its thin package.
The device operates as an enhancement-model transistor with a typical gate threshold voltage between -0.8V and -2.0V. Key specifications include a low drain-source ON resistance of 50 mΩ (typical) and a high forward transfer admittance of 7.4 S (typical). The datasheet provides comprehensive electrical characteristics, thermal data, and circuit configuration details.
| Channel Type | P Channel MOS Type (U-MOSIV) |
|---|---|
| Drain-source ON resistance Rds(ON) | 50 mΩ (typ.) |
| Forward transfer admittance |Yf| | 7.4 S (typ.) |
| Gate threshold voltage Vth | -0.8 to -2.0 V |
| Drain-source breakdown voltage VDSS | -30 V |
| Thermal resistance Rth(ch-a) | 56.8 °C/W (t = 5s) |
The typical drain-source ON resistance is 50 mΩ.
Yes, it is specifically designed for Notebook PC Applications and Portable Equipment Applications.