This document is the datasheet of IXTQ 110N055P, which mainly introduces the maximum voltage, rated current, drain current, gate-source voltage, drain-source voltage, gate-source current, and drain-source resistance of the product.
This document is a technical datasheet for the IXYS 110N055P, an N-Channel Enhancement Mode Power MOSFET available in IXTQ (TO-3P), IXTA (TO-263), and IXTP (TO-220) packages. The device utilizes PolarHT™ technology to achieve high power density.
| Technology | PolarHT™ |
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