This document describes the features and characteristics of the N-Channel Enhancement Mode MOSFET products produced by IXYS, including high voltage, low RDS(on), rugged polysilicon gate cell structure, and fast switching times. The product is suitable for applications such as switch-mode and resonant-mode power supplies, flyback inverters, DC choppers, and high frequency matching.
This document is a technical datasheet for the IXYS IXTA 1N100 and IXTP 1N100 high voltage MOSFETs. It specifies maximum ratings such as a drain-source breakdown voltage of 1000 V and a continuous current of 1.5 A at 25°C. The device features an N-Channel Enhancement Mode structure with HDMOSTM process technology, designed for applications including switch-mode power supplies, flyback inverters, and DC choppers.
| Drain-Source Breakdown Voltage (VDS) | 1000 V |
|---|---|
| Gate-Source Threshold Voltage (VGS(th)) | 2.5 to 4.5 V |
| Continuous Drain Current (ID) | 1.5 A |
| On-Resistance (RDS(on)) | 11 Ω |
| Input Capacitance (Ciss) | 480 pF |
| Output Capacitance (Coss) | 45 pF |
The device is suitable for switch-mode and resonant-mode power supplies, flyback inverters, DC choppers, and high frequency matching.
The maximum operating junction temperature (TJ) is 150°C.