This document introduces the high current power MOSFET products from IXYS. The features of the products include international standard package, 3000V isolation voltage, low RDS (on), rugged polysilicon gate cell structure, low drain-to-case capacitance, and low package inductance. The products are suitable for various applications.
This document provides preliminary technical specifications for the IXYS IXTN 58N50 and IXTN 61N50, which are High Current Power MOSFETs. These devices utilize an N-Channel Enhancement Mode structure and are housed in a miniBLOC SOT-227 B package.
| Drain-Source Voltage (Vdss) | 500 V |
|---|---|
| Continuous Drain Current (IXTN 58N50) | 58 A |
| Continuous Drain Current (IXTN 61N50) | 61 A |
| Package Type | miniBLOC, SOT-227 B |
| Isolation Voltage (RMS) | 3000 V~ |
They are suitable for DC choppers, AC motor speed controls, DC servo and robot drives, and uninterruptible power supplies (UPS).
Yes, the document states that either Source terminal at miniBLOC can be used as Main or Kelvin Source.