This document describes the features and characteristics of the N-Channel Enhancement Mode power MOSFET product produced by IXYS in 2005, including international standard packages, unclamped inductive switching (UIS) rating, and low package inductance. The product is easy to mount, saves space, and has high power density.
This document provides technical information for the IXYS 180N055T Trench Gate Power MOSFET. The device is an N-Channel Enhancement Mode transistor rated for a maximum drain-source voltage of 55 V and a continuous drain current of 180 A at 25°C.
The datasheet includes detailed electrical characteristics, thermal parameters, and physical dimensions for three package types: TO-3P (IXTQ), TO-220 (IXTP), and TO-263 (IXTA). It also features graphical data on output characteristics, safe operating areas, and transient thermal resistance.
| Voss (Max) | 55 V |
|---|---|
| Ios (Continuous) | 180 A |
| Rds(on) (Typical) | 4.0 mQ |
| P, (Max) | 360 Ww |
| Tj (Max) | +175 °C |
The required mounting torque is 1.13 N·m for the TO-3P package and 10 N·m for the TO-220 package.
The maximum tab temperature for soldering is 300°C when held for 10 seconds.