5N50P is a N-channel enhancement mode MOSFET produced by IXYS. Its features are international standard packages, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, and easy to install, space saving and high power density.
This document is a technical data sheet for IXYS N-Channel Enhancement Mode Power MOSFETs. It includes specifications, test conditions, characteristic values, maximum ratings, and performance graphs for the IXTA 5N50P, IXTP 5N50P, and IXTY 5N50P models.
| Drain-Source Voltage (VDSS) | 500 V |
|---|---|
| Continuous Drain Current (ID25) | 4.8 A |
| On-Resistance (RDS(on)) | 1.4 Ω |
| Thermal Resistance Junction-to-Case (TO-263) | 1.4 K/W |
| Operating Temperature Range | -55 ... +150 °C |
The document lists TO-263 (IXTA), TO-220 (IXTP), and TO-252 (IXTY) packages.
The maximum junction temperature is 150 °C.