This document introduces the features and characteristics of PolarHTTM Power MOSFET N-Channel Enhancement Mode, including international standard packages, unclamped inductive switching (UIS) rated, and low package inductance.
This document provides advanced technical information for the IXYS PolarHTTM series of N-channel enhancement mode power MOSFETs. It covers three specific package types: TO-3P (model IXTQ), TO-263 (model IXTA), and TO-220 (model IXTP).
| Drain-Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID25) | 75 A |
| On-Resistance (RDS(on)) | 25 mΩ |
| Package Types | TO-3P (IXTQ), TO-263 (IXTA), TO-220 (IXTP) |
| Operating Junction Temperature Range | -55 ... +150 °C |
The device is available in TO-3P (IXTQ), TO-263 (IXTA), and TO-220 (IXTP) packages.
The maximum operating junction temperature is +150 °C.