The document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode product from IXYS, including international standard packages, low on-resistance, rugged polysilicon gate cell structure, low package inductance, and fast switching times. The product is suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS), and DC choppers.
This document provides comprehensive technical data for the IXYS IXTH50N20 (TO-247 AD) and IXTM50N20 (TO-204 AE) N-channel enhancement mode MOSFETs. Key specifications include a drain-source voltage rating of 200 V, a continuous drain current of 50 A at 25°C, and an on-resistance of 45 mΩ.
The datasheet covers maximum ratings such as gate-source voltage limits, thermal resistance values, and mounting torque requirements. It also includes detailed electrical characteristics like input capacitance, switching times, and source-drain diode parameters, along with graphical representations of output characteristics and safe operating areas.
| Drain-Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 50 A |
| On-Resistance (RDS(on)) | 45 mΩ |
| Thermal Resistance Junction-to-Case (TO-204) | 0.42 K/W |
The continuous gate-source voltage is ±20 V, and the transient limit is ±30 V.
The recommended mounting torque is 1.13 Nm or 10 lb.in.