This document is a specification sheet for a standard power MOSFET product produced by IXYS. The product is a P-channel enhancement mode MOSFET with a voltage rating of 200V, a current rating of 24A, and an on-resistance of 0.15Ω. Its features include international standard package, low on-resistance, ruggedness, easy to drive and protect, etc. It is suitable for applications such as high side switching, push-pull amplifiers, DC choppers, and automatic test equipment.
The document is a technical datasheet for the IXYS IXTH24P20, a P-Channel Enhancement Mode MOSFET designed in an International standard JEDEC TO-247 AD package. Key features include low RDS(on) using HDMOSTM process technology and Unclamped Inductive Switching (UIS) rating.
| Drain-Source Voltage (VDS) | -200 V |
|---|---|
| Continuous Drain Current (ID) | -24 A |
| On-Resistance (RDS(on)) | 0.15 Ω |
| Package Type | TO-247 AD |
It is suitable for high side switching, push-pull amplifiers, DC choppers, and automatic test equipment.
The device offers easy mounting with one screw, space savings, and high power density.