IXTH 12N90 is a TO-247 packaged N-channel enhancement mode MOSFET with a maximum voltage of 900V and a maximum current of 12A. It has a fast switching time and is suitable for applications such as switch-mode power supplies and inverters.
This document is a technical data sheet for the IXYS IXTH 12N90 (TO-247 AD) and IXTM 12N90 (TO-204 AA) N-channel enhancement mode MOSFETs. It details maximum ratings such as a drain-source voltage of 900 V and continuous current of 12 A at 25°C, along with typical electrical characteristics like on-resistance and switching times.
| Drain-Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 12 A |
| Peak Pulse Drain Current (IDM) | 48 A |
| Power Dissipation (PD) at 25°C | 300 W |
| Operating Junction Temperature Range | -55 ... +150 °C |
| On-Resistance (RDS(on)) typical at 25°C | 0.90 Ω |
| Input Capacitance (Ciss) | 4500 pF |
| Turn-on Delay Time (td(on)) | 20 ns |
They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS), and DC choppers.
The recommended mounting torque is 1.13 Nm or 10 lb.in.