IXTA is a high voltage MOSFET produced by IXYS company. It has the characteristics of low RDS(on), high reliability and low package inductance. It is suitable for applications such as switch-mode power supplies and inverters.
This document provides a technical overview of the IXYS IXTA 2N80 and IXTP 2N80 High Voltage MOSFETs. It details maximum operating ratings such as drain-source voltage (VDS) up to 800 V and continuous current (ID) of 2 A at 25°C. Key features include a low on-resistance (RDS(on)) of 6.2 Ω, rugged polysilicon gate structure, and fast switching times suitable for switch-mode power supplies.
| Continuous Drain Current (ID) at 25°C | 2 A |
|---|---|
| On-Resistance (RDS(on)) | 6.2 Ω |
| Package Type IXTA | TO-263 AA (IXTA) |
| Package Type IXTP | STO-220AB (IXTP) |
The device is suitable for switch-mode and resonant-mode power supplies, as well as flyback inverters and DC choppers.
The maximum junction temperature (TJ) is 150°C.