This document describes the features and characteristics of the IXTH 50P10 standard power MOSFET product from IXYS, including international standard package, low RDS(on) value, rugged polysilicon gate cell structure, avalanche rated, and low package inductance. This product is suitable for applications such as high side switching, push-pull amplifiers, DC choppers, and automatic test equipment, and it offers advantages such as easy mounting, space savings, and high power density.
This document provides technical information and specifications for the IXYS IXTH50P10, a P-channel enhancement mode MOSFET rated for avalanche switching. The device features an international standard JEDEC TO-247 AD package with low package inductance and is designed for high-side switching applications.
| Channel Type | P-Channel Enhancement Mode |
|---|---|
| Package Type | TO-247 AD |
| Maximum Drain-Source Voltage (Vdss) | -100 V |
| Continuous Drain Current (Id) | -50 A |
| Maximum Power Dissipation (Pd) | 300 W |
| Operating Junction Temperature Range | -55 ... +150 °C |
The maximum continuous drain current at 25°C is -50 A.
Yes, the device is specified as Avalanche Rated in the title.