This document describes the features and characteristics of the MegaMOSTMFET N-Channel Enhancement Mode products produced by IXYS Corporation, including international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, and low package inductance.
This document provides a comprehensive technical overview of the IXYS IXTH 11N80, IXTH 13N80, IXTM 11N80, and IXTM 13N80 N-channel enhancement mode MOSFETs. It details maximum ratings such as an 800 V drain-source voltage and continuous currents of 11 A or 13 A depending on the model.
The datasheet includes detailed electrical characteristics for both the MOSFET and integrated source-drain diode, along with thermal response data and package dimensions. It highlights features like low RDS(on), rugged polysilicon gate cell structure, and suitability for switch-mode power supplies and motor controls.
| Continuous Drain Current (ID) - 11N80 | 11 A |
|---|---|
| Package Types | TO-204AA, TO-247AD |
| Operating Junction Temperature Range | -55 ... +150 °C |
They are suitable for switch-mode and resonant-mode power supplies, motor controls, and uninterruptible power supplies (UPS).
The maximum lead temperature for soldering is 300 °C.