The document describes the features and characteristics of a low VCE(sat) IGBT with diode and high-speed IGBT with diode combination package produced by IXYS.
This document provides a technical overview of the IXYS IXGH12N100U1 and IXGH12N100AU1, which are High Speed IGBTs with Diode (FRED) integrated into a single JEDEC TO-247 package. The devices feature an HDMOS process to minimize on-state conduction losses and utilize a fast recovery epitaxial diode for soft recovery.
| Collector-Emitter Voltage (VCE) | 1000 V |
|---|---|
| Continuous Collector Current (IC) | 4 A |
| Package Type | JEDEC TO-247 |
| Operating Junction Temperature Range (TJ) | -55 ... +150 /G176C |
| Mounting Torque | 1.13/10 Nm/lb.in. |
These devices are suitable for DC choppers, AC motor speed control, DC servo and robot drives, and uninterruptible power supplies (UPS).
The maximum lead temperature for soldering is 300 /G176C for 1.6 mm from the case for 10 seconds.