IXTH 14N80 is an N-channel enhancement type power MOSFET with a maximum voltage of 800V and a maximum current of 14A. It has a fast switching time and is used in switch-mode power supplies, inverters, UPSs and other power electronic applications.
The document details the maximum ratings and electrical characteristics of the IXTH14N80 MegaMOSFET. Key parameters include a drain-source voltage (VDS) of 800 V, a continuous drain current (ID) of 14 A at 25°C, and an on-resistance (RDS(on)) of 0.7 Ω. The device features a TO-247 AD package with low inductance and is designed for applications such as switch-mode power supplies, motor control, and UPS systems.
| Drain-Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) | 14 A |
| Pulse Drain Current (IDM) | 56 A |
| Power Dissipation (PD) | 300 W |
| On-Resistance (RDS(on)) | 0.7 Ω |
| Package Type | TO-247 AD |
The device is suitable for switch-mode and resonant-mode power supplies, motor control, uninterruptible power supplies (UPS), and DC choppers.
The maximum operating junction temperature (TJ) is 150°C, with a storage temperature range of -55°C to +150°C.