IXTH 12 N50A is a N-channel enhancement mode power MOSFET from IXYS with a maximum voltage of 500V, maximum current of 12A and maximum on resistance of 0.4 ohms.
This document provides a technical overview of the IXYS IXTH 12N50A and IXTM 12N50A Power MOSFETs. It details maximum ratings such as a drain-source voltage of 500 V and a continuous current of 12 A at 25°C. The devices feature an N-channel enhancement mode structure with low on-resistance (RDS(on)) of 0.4 Ω.
| Continuous Drain Current (ID) | 12 A |
|---|---|
| Package Type | TO-204AA, TO-247 AD |
The junction temperature (TJ) ranges from -55°C to +150°C.
The continuous gate-source voltage (VGS) is ±20 V, with a transient limit of ±30 V.