This datasheet provides information on the maximum ratings, characteristics, packages, pinout, applications, and advantages of IXTH/IXTM 10N100 and IXTH/IXTM 12N100.
This document provides a comprehensive technical overview of the IXYS IXTH10N100, IXTH12N100, IXTM10N100, and IXTM12N100 N-Channel Enhancement Mode MOSFETs. It details maximum ratings such as drain-source voltage up to 1000 V and continuous current capabilities of 10 A or 12 A at 25°C.
| Peak Pulse Drain Current (IDM) | 40 A or 48 A |
|---|---|
| Total Power Dissipation (PD) @ 25°C | 300 W |
| Operating Junction Temperature Range | -55 ... +150 °C |
| Storage Temperature Range (Tstg) | -55 ... +150 °C |
| On-State Resistance (RDS(on)) @ 10V, 0.5 ID | 1.20 Ω or 1.05 Ω |
| Gate Threshold Voltage (VGS(th)) | 2 to 4.5 V |
They are suitable for switch-mode and resonant-mode power supplies, motor controls, and uninterruptible power supplies (UPS).
The recommended mounting torque is 1.13 Nm or 10 lb.in.