BSI (BRILLIANCE SEMICONDUCTOR) - Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 R0201-BS62LV1600 Revision 2.2 Jan Manual

BS62LV1600 is a low-power CMOS SRAM from Fujitsu. It operates from a wide range of 2.4V to 5.5V supply voltage, with typical standby current of 1.5uA and maximum access time of 55ns.


BSI (BRILLIANCE SEMICONDUCTOR) - Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 R0201-BS62LV1600 Revision 2.2 Jan Manual - cover page
Brand
BSI
Category
Memory
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
204 KB
Published
11 April, 2012
Updated
30 September, 2023
MD5 checksum
C1D6FAE8E4A47E966B09C11C9D7ECAE9

About this manual

The BS62LV1600 is a very low‑power CMOS static RAM offered by Brilliance Semiconductor. It provides 2 M × 8 bits of storage, operates over a wide supply range, and includes features such as automatic power‑down, three‑state outputs, and easy memory expansion.

The document lists electrical characteristics, timing parameters, package options, and ordering information, helping designers integrate the device into a variety of applications ranging from consumer electronics to industrial equipment.

What's inside

  • Features
  • Electrical Characteristics
  • Pin Configurations
  • Timing Parameters
  • Package Information
  • Ordering Information
  • Revision History

Specifications

Supply voltage range2.4 V ~ 5.5 V
Standby current (3.0 V)1.5 µA
Maximum access time (3.0 V)55 ns
Package types44‑pin TSOP II and 48‑ball BGA
Industrial temperature range-40 °C ~ +85 °C

Frequently asked questions

What supply voltage range does the BS62LV1600 support?

It operates from 2.4 V up to 5.5 V.

What is the standby current at 3.0 V?

The standby current is 1.5 µA.

Which package options are available for this SRAM?

The device is offered in a 44‑pin TSOP II and a 48‑ball BGA package.

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