BH62UV8001 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH62UV8001 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH62UV8001 is available in DICE form and 48-ball BGA package.
The BH62UV8001 is a high‑performance, ultra‑low‑power static RAM organized as 1 M × 8 bits. It operates from 1.65 V to 3.6 V, consumes as little as 2.5 µA standby current, and provides a maximum access time of 55 ns.
The document includes pin configurations, electrical characteristics (DC and AC), timing diagrams for read and write cycles, ordering information, and package dimensions for both DICE and 48‑ball BGA versions.
| Operating voltage (Vcc) | 1.65 V – 3.6 V |
|---|---|
| Standby current (typical) | 2.5 µA at 3.0 V/25 °C |
| Maximum access time | 55 ns |
| Package types | DICE, 48‑ball BGA |
| Temperature range (operating) | -40 °C to +85 °C |
| Power dissipation | 1.0 W |
The device operates from 1.65 V to 3.6 V.
Typical standby current is 2.5 µA at 3.0 V and 25 °C.
The maximum read access time is 55 ns.
It is offered in DICE and 48‑ball BGA packages.