BSI BH62UV8001 Ultra Low Power/High Speed CMOS SRAM handbook
Update: 30 September, 2023
BH62UV8001 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at 1.65V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH62UV8001 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH62UV8001 is available in DICE form and 48-ball BGA package.
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MD5 Checksum: F25641BCBC032C0EA88AEDD3EC27000B
Publication date: 10 April, 2012
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BSI BH62UV8001 Ultra Low Power/High Speed CMOS SRAM handbook PDF