This file introduces the characteristics of BS616LV2017 128K X 16 bit memory, including operating voltage, operating current, access time, etc.
The BS616LV2017 is a high‑performance, very low‑power CMOS static RAM organized as 128 K words by 16 bits. It operates from a 4.5 V to 5.5 V supply, features a typical standby current of 1.0 µA, and provides fast access times of 55 ns (typical) to 70 ns (max). The device includes three‑state outputs, TTL‑compatible pins, and an automatic power‑down function when deselected.
The SRAM is offered in three package options – DICE, a JEDEC‑standard 44‑pin TSOP‑2, and a 48‑ball BGA. Pin configurations support active‑low chip enable (CE) and output enable (OE) for easy expansion. Ordering information, package dimensions, and detailed electrical characteristics are provided for designers.
| Memory size | 128K × 16 bits |
|---|---|
| Supply voltage | 4.5 V ~ 5.5 V |
| Standby current (CMOS) | 1.0 µA typ. |
| Access time | 55 ns typ., 70 ns max |
| Operating temperature range | -40 °C ~ +85 °C |
| Power dissipation | 1.0 W |
| Data retention voltage | 1.5 V |
| Package options | DICE, TSOP‑2‑44, BGA‑48‑0608 |
The device operates from 4.5 V to 5.5 V.
The typical CMOS standby current is 1.0 µA at 5 V and 25 °C.
It is available in DICE, a 44‑pin TSOP‑2, and a 48‑ball BGA package.
Typical access time is 55 ns, with a maximum of 70 ns.