The BS62LV2006 is a high performance, very low power CMOS Static Random Access Memory with a wide range of operating voltage and high speed access time. It utilizes advanced CMOS technology and circuit techniques to provide high speed and low power features.
The BS62LV2006 SRAM provides 256 K × 8‑bit storage with a wide supply range of 2.4 V – 5.5 V and ultra‑low standby current (0.1 µA typical). It features automatic power‑down when deselected, three‑state TTL‑compatible outputs, and both active‑LOW and active‑HIGH chip‑enable options for flexible system integration.
The device is offered in multiple packages—including DICE, 32‑pin SOP, STSOP, TSOP, and 36‑ball BGA—and operates over an industrial temperature range of –40 °C to +85 °C. Detailed electrical characteristics, timing diagrams, and pin descriptions are provided for design reference.
| Memory size | 256 K × 8 bit |
|---|---|
| Supply voltage range | 2.4 V – 5.5 V |
| Standby current (typical) | 0.1 µA at 25 °C |
| Maximum access time | 55 ns |
| Operating temperature range | –40 °C to +85 °C |
| Data retention supply voltage | as low as 1.5 V |
It operates from 2.4 V up to 5.5 V.
The typical standby current is 0.1 µA at 25 °C.