BS616LV4017 is a high performance, low power 256Kx16-bit CMOS static random access memory. This device has 16 address lines and 16 data lines, supports 55ns and 70ns access time, can work at the power supply voltage of 2.4V~5.5V, and the working temperature range is -40℃~+85℃.
The BS616LV4017 SRAM provides 256 K words of 16‑bit memory, designed for low power consumption and wide supply voltage operation (2.4‑5.5 V). It offers fast access times (55 ns typical) and a standby current as low as 0.45 µA at 3.0 V.
The device is available in multiple package types (TSOP2‑44, BGA‑48‑0608, DICE) and operates over an industrial temperature range of –40 °C to +85 °C. Pin functions include address inputs, chip enable, write enable, output enable, and bi‑directional data pins, with automatic power‑down when deselected.
| Memory organization | 256K × 16 bit |
|---|---|
| Supply voltage range | 2.4 V – 5.5 V |
| Standby current (typical) | 0.45 µA |
| Access time (typical) | 55 ns |
| Power dissipation | 1.0 W |
| Operating temperature range | -40 °C to +85 °C |
| Package options | TSOP2‑44, BGA‑48‑0608, DICE |
| Package options | TSOP2‑44, BGA‑48‑0608, DICE |
It operates from 2.4 V to 5.5 V.
The typical standby current is 0.45 µA.
It is offered in TSOP2‑44, BGA‑48‑0608, and DICE packages.
The maximum access time is 55 ns at 3.0 V and 85 °C.